3
IR2172
ADVANCE INFORMATION
www.irf.com
Symbol
Definition
Min. Typ. Max. Units Test Conditions
Propagation delay characteristics
fo
Carrier frequency output
40
kHz
f
/
T
A
Temperature drift of carrier frequency
500
ppm/
o
C
Dmin
Minimum duty
7
%
Dmax
Maximum duty
93
%
V
IN
+=+260mV,V
IN
-=0V
BW
fo bandwidth
15
kHz
PHS
Phase shift at 1kHz
-10
o
AC Electrical Characteristics
V
CC
= V
BS
= 15V, unless otherwise specified.
V
IN
Nominal input voltage range before saturation
-260
260
|V
IN+
_
V
IN-
|
V
OC+
Overcurrent trip positive input voltage
260
V
OC-
Overcurrent trip negative input voltage
-260
V
OS
Input offset voltage
-10
0
10
V
IN
= 0V (Note 1)
V
OS
/
TA
Input offset voltage temperature drift
25
礦/
o
C
G
Gain (duty cycle % per V
IN
)
157
162
167
%/V max gain error=5%
(Note 2)
G
/
T
A
Gain temperature drift
20
ppm/
o
C
I
LK
Offset supply leakage current
50
礎
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current
1
2
V
S
= 0V
I
QCC
Quiescent V
CC
supply current
1
LIN
Linearity (duty cycle deviation from ideal linearity
0.5
1
%
curve)
V
LIN
/
TA
Linearity temperature drift
.005
%/
o
C
I
OPO
Digital PWM output sink current
20
2
I
OCC
OC output sink current
10
1
DC Electrical Characteristics
V
CC
= V
BS
= 15V, unless otherwise specified.
figure 1
V
IN
= 0 & 5V
V
IN
+=-260mV,V
IN
-=0V
Symbol
Definition
Min. Typ. Max. Units Test Conditions
Note 1: ?0mV offset represents ?.5% duty cycle fluctuation
Note 2: Gain = (full range of duty cycle in %) / (full input voltage range).
V
IN
+ = 100mVpk -pk
sine wave, gain=-3dB
V
IN
+ =100mVpk-pk
sine wave
mA
mV
mA
V
O
= 1V
V
O
= 0.1V
V
O
= 1V
V
O
= 0.1V
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